Acoustic manipulation of electron-hole pairs in GaAs at room temperature
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Acoustic manipulation of electron-hole pairs in GaAs at room temperature

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Acoustic manipulation of electron-hole pairs in GaAs at room temperature

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Morais de Lima, Mauricio, Jr.; Hey, R.; Stotz, J.A.H.; Santos, P.V.
This document is a artículoDate2004

Este documento está disponible también en : http://dx.doi.org/10.1063/1.1695636

Este documento está disponible también en : http://hdl.handle.net/10550/31449

We demonstrate the optically detected long-range (>100 µm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves (SAWs) in (In,Ga)As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAWbeams, which can be used as a basic control gate for information processing based on ambipolar transport.

    Morais de Lima, Mauricio, Jr. Hey, R. Stotz, J.A.H. Santos, P.V. 2004 Acoustic manipulation of electron-hole pairs in GaAs at room temperature Applied Physics Letters 84 14 2569
http://dx.doi.org/10.1063/1.1695636

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