Coefficient of thermal expansion and elastic modulus of thin films
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Coefficient of thermal expansion and elastic modulus of thin films

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Coefficient of thermal expansion and elastic modulus of thin films

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dc.contributor.author Morais de Lima, Mauricio, Jr.
dc.contributor.author Lacerda, R.G.
dc.contributor.author Vilcarromero, J.
dc.contributor.author Marques, F.C.
dc.date.accessioned 2013-11-26T13:33:05Z
dc.date.available 2013-11-26T13:33:05Z
dc.date.issued 1999
dc.identifier.uri http://dx.doi.org/10.1063/1.371463
dc.identifier.uri http://hdl.handle.net/10550/31435
dc.description.abstract The coefficient of thermal expansion (CTE), biaxial modulus, and stress of some amorphous semiconductors(a-Si:H, a-C:H, a-Ge:H, anda-GeC x :H) and metallic (Ag and Al) thin films were studied. The thermal expansion and the biaxial modulus were measured by the thermally induced bending technique. The stress of the metallic films,deposited by thermal evaporation (Ag and Al), is tensile, while that of the amorphousfilmsdeposited by sputtering(a-Si:H, a-Ge:H, anda-GeC x :H) and by glow discharge(a-C:H)is compressive. We observed that the coefficient of thermal expansion of the tetrahedral amorphousthin films prepared in this work, as well as that of the films reported in literature, depend on the network strain. The CTE of tensile films is smaller than that of their corresponding crystalline semiconductors, but it is higher for compressive films. On the other hand, we found out that the elastic biaxial modulus of the amorphous and metallic films is systematically smaller than that of their crystalline counterparts. This behavior stands for other films reported in the literature that were prepared by different techniques and deposition conditions. These differences were attributed to the reduction of the coordination number and to the presence of defects, such as voids and dangling bonds, in amorphousfilms. On the other hand, columnar structure and microcrystallinity account for the reduced elasticity of the metallic films.
dc.relation.ispartof Journal of Applied Physics, 1999, vol. 86, num. 9, p. 4936
dc.rights.uri info:eu-repo/semantics/openAccess
dc.source Morais de Lima, Mauricio, Jr. Lacerda, R.G. Vilcarromero, J. Marques, F.C. 1999 Coefficient of thermal expansion and elastic modulus of thin films Journal of Applied Physics 86 9 4936
dc.subject Ciència dels materials
dc.subject Física
dc.title Coefficient of thermal expansion and elastic modulus of thin films
dc.type info:eu-repo/semantics/article
dc.date.updated 2013-11-26T13:33:05Z
dc.identifier.doi http://dx.doi.org/10.1063/1.371463
dc.identifier.idgrec 037354

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